Characterization of Mid-Infrared Silicon-on-Sapphire Microring Resonators With Thermal Tuning

IEEE Photonics Journal

Zhenzhou Cheng¹  Hon Ki Tsang¹  Xia Chen¹  Yi Min Chen¹  Chi Yan Wong¹  Christy K. Y. Fung¹  Ke Xu¹ 

[1] Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong;

关键词: Integrated nanophotonic systems;    mid-infrared (mid-IR);    silicon nanophotonics;    silicon-on-sapphire (SOS);    temperature;    waveguide devices;   

DOI  :  10.1109/JPHOT.2012.2204734

来源: DOAJ

【 摘 要 】

Microring resonators on silicon-on-sapphire (SOS) were characterized at 2.75 $\mu\hbox{m}$ wavelength. We obtained a $Q$ factor of 11400 $\pm$ 800. The thermo-optic coefficient of epitaxial silicon of SOS wafer was measured to be $2.11 \pm 0.08 \times 10^{-4}\ \hbox{K}^{-1}$. We also describe a characterization technique to measure the $Q$ of microring resonators using a fixed wavelength source. By only varying the temperature of the device, it is possible to measure the $Q$ of a mid-infrared (mid-IR) microresonator. The proposed method provides an alternative method of $Q$ measurement for microring resonators in mid-IR, where tunable lasers may not be easily available. The technique was used to determine the $Q$ of SOS microring resonators at 2.75 $\mu\hbox{m}$ wavelength.

【 授权许可】

Unknown