Investigation of Intra-Nitride Charge Migration Suppression in SONOS Flash Memory

Micromachines

Jae-Gab Lim¹  Ga-Won Lee¹  Jun-Kyo Jung¹  Seung-Dong Yang¹  Hi-Deok Lee¹  Seong-gye Park² 

[1] Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea;SK Hynix Inc., Gyeongchung-daero, Bubal-eub, Icheon-si 17336, Korea;

关键词: SONOS;    flash memory;    charge spreading;    plasma treatment;    Oxygen-related trap;    data retention;   

DOI  :  10.3390/mi10060356

来源: DOAJ

【 摘 要 】

In order to suppress the intra-nitride charge spreading in 3D Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) flash memory where the charge trapping layer silicon nitride is shared along the cell string, N₂ plasma treated on the silicon nitride is proposed. Experimental results show that the charge loss decreased in the plasma treated device after baking at 300 °C for 2 h. To extract trap density according to the location in the trapping layer, capacitance-voltage analysis was used and N₂ plasma treatment was shown to be effective to restrain the interface trap formation between blocking oxide and silicon nitride. Moreover, from X-ray Photoelectron Spectroscopy, the reduction of Si-O-N bonding was observed.

【 授权许可】

Unknown