Sensors | |
An Ionizing Radiation Sensor Using a Pre-Programmed MAHAOS Device | |
Wen-Ching. Hsieh2  Hao-Tien Daniel. Lee1  | |
[1] ETOMS Electronics Corp, 12, Innovation 1st. Rd, Science-Based Industrial Park, Hsin-Chu 300, Taiwan; E-Mail:;Department of Opto-Electronic System Engineering, Minghsin University of Science and Technology, Xinxing Rd, 1, Xinfeng 30401, Taiwan | |
关键词:
high |
|
DOI : 10.3390/s140814553 | |
来源: mdpi | |
【 摘 要 】
Metal-aluminum oxide–hafnium aluminum oxide–silicon oxide–silicon (hereafter MAHAOS) devices can be candidates for ionizing radiation sensor applications. In this work, MAHAOS devices (SONOS-like structures with high
【 授权许可】
CC BY
© 2014 by the authors; licensee MDPI, Basel, Switzerland
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
RO202003190023120ZK.pdf | 1194KB | download |