Proceedings | |
Performance of TAHOS Device as Nonvolatile TID Radiation Sensor | |
Jong, Fuh-Cheng1  | |
关键词: high k; sensor; radiation; SONOS; SOHOS; MOS; TID; | |
DOI : 10.3390/ecsa-3-C001 | |
学科分类:社会科学、人文和艺术(综合) | |
来源: mdpi | |
【 摘 要 】
The titanium nitrideâaluminum oxideâhafnium oxideâsilicon oxideâsilicon device using aluminum oxide as charge-blocking layer (hereafter TAHOS) could be a candidate for nonvolatile total ionization dose (TID) radiation sensor. In this paper, gamma radiation induces a significant decrease in the threshold voltage VT of TAHOS and the radiation-induced VT decrease on TAHOS is nearly 1.3 times of that on a standard titanium nitrideâsilicon oxideâhafnium oxideâsilicon oxideâsilicon device (hereafter TOHOS) device after 5 Mrad TID gamma irradiation. The change in VT of TAHOS after gamma irradiation also has a strong correlation to TID up to 5 Mrad gamma irradiation. Moreover, the VT 10yrs retention characteristic of TAHOS device can be markedly improved and is nearly 13% better than that of a standard TOHOS device after 5 Mrad gamma irradiation. Therefore, the TAHOS device in this study has demonstrated the possibility using TAHOS for high TID response and good TID data retention for non-volatile TID radiation sensing.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO201902023544849ZK.pdf | 517KB | download |