Performance of TAHOS Device as Nonvolatile TID Radiation Sensor

Proceedings

Jong, Fuh-Cheng¹ 

关键词: high k;    sensor;    radiation;    SONOS;    SOHOS;    MOS;    TID;   

DOI  :  10.3390/ecsa-3-C001

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

The titanium nitride–aluminum oxide–hafnium oxide–silicon oxide–silicon device using aluminum oxide as charge-blocking layer (hereafter TAHOS) could be a candidate for nonvolatile total ionization dose (TID) radiation sensor. In this paper, gamma radiation induces a significant decrease in the threshold voltage VT of TAHOS and the radiation-induced VT decrease on TAHOS is nearly 1.3 times of that on a standard titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon device (hereafter TOHOS) device after 5 Mrad TID gamma irradiation. The change in VT of TAHOS after gamma irradiation also has a strong correlation to TID up to 5 Mrad gamma irradiation. Moreover, the VT 10yrs retention characteristic of TAHOS device can be markedly improved and is nearly 13% better than that of a standard TOHOS device after 5 Mrad gamma irradiation. Therefore, the TAHOS device in this study has demonstrated the possibility using TAHOS for high TID response and good TID data retention for non-volatile TID radiation sensing.

【 授权许可】

CC BY