UV Total Dose Nonvolatile Sensor Using Fluorine-Treated SOHOS Capacitor Device

Proceedings

Hsieh, Wen-Ching¹ 

关键词: UV;    sensor;    SOHOS;    radiation;    TD;   

DOI  :  10.3390/ecsa-4-04904

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

The fluorine-treated silicon–silicon oxide–hafnium oxide–silicon oxide–silicon capacitor device (hereafter F-SOHOS) could be a candidate for UV radiation total dose (hereafter TD) nonvolatile sensor. The UV radiation induces a significant increase in the threshold voltage VT of the F-SOHOS capacitor, and the change in VT for F-SOHOS capacitor also has a strong correlation to UV TD up to 100 mW·s/cm2 after UV irradiation. The experimental results indicate that UV TD radiation-induced increase of VT in F-SOHOS capacitor under gate positive bias stress (hereafter PVS) is nearly 4 V after UV TD 100 mW·s/cm2 irradiation. Moreover, the VT-retention loss of the nonvolatile F-SOHOS capacitor device after 10 years retention is below 15%. The UV TD data can be permanently stored and accumulated in the non-volatile F-SOHOS capacitor device. Furthermore, the UV TD data in the F-SOHOS capacitor devices can be erased to original null state by positive charges injection under gate negative bias stress (hereafter NVS). The F-SOHOS capacitor device in this study has demonstrated the feasibility of non-volatile UV TD radiation sensing.

【 授权许可】

CC BY