RESEARCH PROCESS PLASMA ETCHING SIO2 MEMBRANE

Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki

B. A. Shangereeva¹  P. R. Zakharova²  A. R. Shakhmaeva²  T. A. Ismailov³ 

[1] ФГБОУ ВПО «Дагестанский гос- ударственный технический университет», г. Махачкала;ФГБОУ ВПО «Дагестанский государственный технический университет», г. Махачкала;ФГБОУ ВПО «Дагестанский государственный технический университет». Заслуженный деятель науки РФ, г. Махачкала;

关键词: substrate;    ion-plasma treatment;    plasma chemical etching;   

DOI  :  10.21822/2073-6185-2014-35-4-56-62

来源: DOAJ

【 摘 要 】

The article discusses the results of plasma chemical etching of silicon dioxide in the fluorine-containing medium in the manufacture of semiconductor devices. Delivered and processed to obtain the solution of the smoothed microrelief contact windows in SiO2 other materials. The solution of the problem is closely connected with the problem of an isotropic plasma chemical etching, when the rate of lateral (horizontal) equal to the speed of the vertical etching, which allows to obtain smooth wall structures with maximum care dimensions on the border with photoresist or other masking coating.

【 授权许可】

Unknown