Fabrication of Superconducting Nb–AlN–NbN Tunnel Junctions Using Electron-Beam Lithography

Electronics

Mikhail Yu. Fominsky¹  Pavel N. Dmitriev¹  Valery P. Koshelets¹  Lyudmila V. Filippenko¹  Artem M. Chekushkin¹ 

[1] Kotelnikov Institute of Radio Engineering and Electronics of RAS, Mokhovaya 11-7, 125009 Moscow, Russia;

关键词: electron-beam lithography;    negative electronic resists;    plasma chemical etching;    magnetron sputter deposition;    superconducting tunnel structures;    niobium-based high-quality tunnel junctions;   

DOI  :  10.3390/electronics10232944

来源: DOAJ

【 摘 要 】

Mixers based on superconductor–insulator–superconductor (SIS) tunnel junctions are the best input devices at frequencies from 0.1 to 1.2 THz. This is explained by both the extremely high nonlinearity of such elements and their extremely low intrinsic noise. Submicron tunnel junctions are necessary to realize the ultimate parameters of SIS receivers, which are used as standard devices on both ground and space radio telescopes around the world. The technology for manufacturing submicron Nb–AlN–NbN tunnel junctions using electron-beam lithography was developed and optimized. This article presents the results on the selection of the exposure dose, development time, and plasma chemical etching parameters to obtain high-quality junctions (the ratio of the resistances below and above the gap R_j/R_n). The use of a negative-resist ma-N 2400 with lower sensitivity and better contrast in comparison with a negative-resist UVN 2300-0.5 improved the reproducibility of the structure fabrication process. Submicron (area from 2.0 to 0.2 µm²) Nb–AlN–NbN tunnel junctions with high current densities and quality parameters R_j/R_n > 15 were fabricated. The spread of parameters of submicron tunnel structures across the substrate and the reproducibility of the cycle-to-cycle process of tunnel structure fabrication were measured.

【 授权许可】

Unknown