Tunnel junction based memristors as artificial synapses

Frontiers in Neuroscience

Andy eThomas¹  Elisabetta eChicca¹ 

[1] Bielefeld University;

关键词: synaptic plasticity;    Neuromorphic systems;    memristors;    Tunnel junction;    Artificial synapses;   

DOI  :  10.3389/fnins.2015.00241

来源: DOAJ

【 摘 要 】

We prepared magnesia, tantalum oxide and barium titanate based junction structures and investigated their memristive properties. The low amplitudes of the resistance change in these types of junctions are the major obstacle for their use. Here, we increased the amplitude of the resistance change from 10% up to 100%. Utilizing the memristive properties, we looked into the use of the junction structures as artificial synapses. We observed analogs of long-term potentiation, long-term depression and spike-time dependent plasticity in these simple two terminal devices. Finally, we suggest a possible pathway of these devices towards their integration in neuromorphic systems for storing analog synaptic weights and supporting the implementation of biologically plausible learning mechanisms.

【 授权许可】

Unknown