Si Interface Barrier Modification on Memristor for Brain-Inspired Computing

33rd International Conference on the Physics of Semiconductors

Wu, Wei^1 ; Wu, Huaqiang^1 ; Gao, Bin^1 ; Qian, He^1

Institute of Microelectronics, Tsinghua University, Beijing

100084, China^1

关键词: Brain-inspired computing;    Emerging technologies;    Interface switching;    Neuromorphic computing;    Neuromorphic systems;    Resistive random access memory (rram);    Resistive switching;    Switching mechanism;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012064/pdf
DOI  :  10.1088/1742-6596/864/1/012064

来源: IOP

【 摘 要 】

Memristor is an emerging technology aimed at implementing neuromorphic computing in hardware system. Resistive random access memory (RRAM) is a kind of memristor with excellent performance, but abrupt switching in the set process influences the efficiency of neuromorphic system. In this study, we present an interface switching memristor device based on TiN/Si/TaOx/TiN stack and CMOS compatible fabrication process to achieve gradually resistive switching both in set and reset processes. The devices show a more than 10 switching window. The related switching mechanism is discussed.