Adaptive behaviour of silicon oxide memristive nanostructures

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Korolev, D.S.^1 ; Mikhaylov, A.N.^1 ; Belov, A.I.^1 ; Sergeev, V.A.^1 ; Antonov, I.N.^1 ; Gorshkov, O.N.^1 ; Tetelbaum, D.I.^1

Lobachevsky University, 23/3 Gagarin prospect, Nizhny Novgorod

603950, Russia^1

关键词: Adaptive behavior;    Adaptive behaviour;    Electrical pulse;    Neuromorphic systems;    Programming pulse;    Resistance state;    Resistive switching;    Synaptic plasticity;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012161/pdf
DOI  :  10.1088/1742-6596/741/1/012161

来源: IOP

【 摘 要 】

The response to electrical pulses of various parameters has been studied for the CMOS-compatible memristive nanostructures on the basis of silicon oxide demonstrating reproducible resistive switching. It is established that an increase in the amplitude or width of a single programming pulse is followed by the gradual decrease in the device resistivity. By applying periodic pulse sequences of different polarity it is possible to obtain both lower and higher resistance states. This adaptive behavior is analogous to synaptic plasticity and considered as one of the main conditions for the application of memristive devices in neuromorphic systems and synaptic electronics.