Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells

THIN SOLID FILMS

卷:519

Article

Suemasu, Takashi¹  Saito, Takanobu¹  Toh, Katsuaki¹  Okada, Atsushi¹  Khan, Muhammad Ajmal¹ 

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

关键词: BaSi2;    Solar cell;    Tunnel junction;    Photoresponsivity;   

DOI  :  10.1016/j.tsf.2011.05.028

来源: Elsevier

【 摘 要 】

We have successfully grown 360-nm-thick undoped n-BaSi2 epitaxial layers on the n(+)-BaSi2/p(+)-Si(111) tunnel junction, by molecular beam epitaxy. The external quantum efficiency reached approximately 17.8% at 500 nm under a reverse bias voltage of 4 V at room temperature, the highest value ever reported for semiconducting silicides. The quantum efficiency was compared to 240-nm-thick undoped n-BaSi2 epitaxial layers on a p-Si(111) substrate. (C) 2011 Elsevier B. V. All rights reserved.

【 授权许可】

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