Thermal Characterization of SiC Modules for Variable Frequency Drives

IEEE Open Journal of Power Electronics

Tianchen Li¹  Marzieh Karami¹  Robert Cuzner¹  Rangaranjan Tallam² 

[1] Electrical Engineering Department, College of Engineering and Applied Science, University of Wisconsin Milwaukee, Milwaukee, WI, USA;Low Voltage Drives Group of Rockwell Automation, Milwaukee, WI, USA;

关键词: SiC;    variable frequency drive (VFD);    power cycling;    reverse conduction;    low speed operation and thermal model;   

DOI  :  10.1109/OJPEL.2021.3075441

来源: DOAJ

【 摘 要 】

Silicon carbide (SiC) devices can exhibit simultaneously high electro-thermal conductivity and extremely fast switching. To perform optimal designs showing the benefits of SiC in achieving efficiency, size, weight, and cost objectives for electric converters design, it is necessary to establish better models for calculating device losses and an efficient thermal model that can be calibrated to consider the nuances of measurement based thermal equivalent circuits. This work's outputs can be used in a power converter multi-objective optimization process or real-time temperature prediction of drives to improve reliability and maximize performance. The proposed modified loss calculation and thermal model demonstrate the SiC power module's advantages to reduce peak junction temperature and power cycling effects. A detailed power loss calculation and thermal model is developed and tested on a 480 V, 186 A, 150 HP variable frequency drive (VFD) with SiC modules. A comparison between the SiC module and an equivalent rated Si module demonstrates the reduction in power cycling effects, particularly at low-speed operation. Infrared (IR) imaging results and analytical explanations of the phenomenon is provided. Power cycle tests show that higher thermal conductivity is not the only reason contributing to the lower temperature ripple in low-speed operation.

【 授权许可】

Unknown