A RC-IGBT with built-in free wheeling diode controlled by MOSFET

IEICE Electronics Express

Weizhong Chen¹  Zhengsheng Han¹  Lijun He¹  Yuchan Wang²  Qiao Guo²  Xiaoyun Li³ 

[1] College of electronics engineering, Chongqing University of Posts and Telecommunications;Institute of Microelectronics of Chinese Academy of Sciences;University of Chinese Academy of Sciences

关键词: RC-IGBT;    FWD;    forward conduction;    reverse conduction;   

DOI  :  10.1587/elex.14.20170817

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with integrated Free-Wheeling Diode (FWD) in edge termination region controlled by metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed. The Field Limiting Ring (FLR) of the edge termination acts as the anode and the N-Collector acts as the cathode of the FWD. The MOSFET makes the FLR conduct reverse current at reverse conduction and float at reverse breakdown. Compared with the conventional RC-IGBT, which integrates the FWD in active cell region, the proposed device can eliminate the snapback easily at forward conduction. In addition, the forward voltage drop can be decreased largely.

【 授权许可】

CC BY