Snapback-free RC-LIGBT with integrated LDMOS and LIGBT

Micro & nano letters

article

Weizhong Chen¹  Shun Li¹  Yao Huang¹  Yi Huang¹  LiJun He¹  ZhengSheng Han² 

[1] College of Electronics Engineering, Chongqing University of Posts and Telecommunications;Institute of Microelectronics of Chinese Academy of Sciences;University of Chinese Academy of Sciences

关键词: insulated gate bipolar transistors;    snapback-free RC-LIGBT;    M-RC-LIGBT;    forward conduction;    LDMOS mode;    LIGBT mode;    reverse conduction ability;    integrated LDMOS;    reverse-conducting lateral insulated-gate bipolar transistor;    independent LDMOS region;    LIGBT region;    single electron;    inner diode;    P-body anode;    N-collector cathode;    reverse conduction properties;    voltage 0.94 V;    voltage 0.82 V;   

DOI  :  10.1049/mnl.2019.0248

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

A novel reverse-conducting lateral insulated-gate bipolar transistor (RC-LIGBT) merged with an independent LDMOS region and LIGBT region is proposed, which is named M-RC-LIGBT. The forward conduction of the M-RC-LIGBT is divided into three steps, firstly it works in laterally-diffused-metal-oxide semiconductor (LDMOS) mode with single electron, and then it works in LDMOS and LIGBT modes with electron and hole, and finally it is dominated by the LIGBT mode. There is no abrupt current observed in the forward conduction, thus the snapback phenomenon is eliminated. At the reverse conduction, the M-RC-LIGBT integrates an inner diode, and the P-body acts as the anode and the N-collector acts as the cathode of the diode, respectively, thus the reverse conduction ability is achieved. As the results show, the M-RC-LIGBT has superior forward and reverse conduction properties, the V F and V R are 0.94 and 0.82 V, respectively, which are decreased by 61 and 18% when compared to the conventional RC-LIGBT, respectively.

【 授权许可】

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