A separated RC-IGBT with PIN and MPS diode

IEICE Electronics Express

Weizhong Chen¹  Xi Qu²  Wei Wang¹ 

[1] College of electronics engineering, Chongqing University of Posts and Telecommunications;School of automation engineering, University of Electronic Science and Technology of China

关键词: RC-IGBT;    PIN;    MPS;    reverse conduction;    reverse recovery;   

DOI  :  10.1587/elex.12.20150443

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(12)A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring separated freewheeling diode (FWD) and IGBT is proposed. The proposed RC-IGBT with two kinds of anti-paralleled FWDs (PIN and MPS diode) is discussed. The simulation show that the integrated Merged P-i-N/Schottky (MPS) diode can improve the property of the reverse conduction and reverse recovery greatly than the PIN diode, the reason is that a new mechanism is adopted by the Schottky contact of the MPS diode. As the results indicate that the RC-IGBT with MPS diode achieves lower VR and JPR when compared to the PIN diode.

【 授权许可】

Unknown