Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications

IEEE Journal of the Electron Devices Society

Arka Halder¹  Sergej Makovejev¹  Denis Flandre¹  Jean-Pierre Raskin²  Valeriya Kilchytska²  Babak Kazemi Esfeh³  Lucas Nyssens⁴ 

[1] catholique de Louvain, Louvain-la-Neuve, Belgium;ICTEAM, Universit&x00E9;Incize, Louvan-la-Neuve, Belgium;Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universit&x00E9;

关键词: Analog and RF figures of merit;    FDSOI;    FinFET;    MOSFET;    self-heating;    S-parameters;   

DOI  :  10.1109/JEDS.2021.3057798

来源: DOAJ

【 摘 要 】

This review paper assesses the main approaches in the electrical characterization of advanced MOSFETs towards their future analog and RF applications. Those approaches are shown to be different from the traditionally used ones for the assessment of the device perspectives for digital applications. Based on the original research realized by our group over the last years, advantages and necessity of those techniques will be demonstrated on different study cases of various advanced MOSFETs, such as Fully Depleted Silicon-on-Insulator (FDSOI), FinFETs and NanoWires (NW) in a wide temperature range (from cryogenic, 4 K up to 250°C). A wide frequency band characterization (from DC up to hundred GHz range) will be positioned as a key element enabling a fair device assessment towards analog and RF applications. Importance of the “extrinsic” parasitic elements in the advanced devices is enormous, sometimes even dominating the device performance. Therefrom arises the need for a proper separate extraction and discussion of “intrinsic” versus “extrinsic” parameters.

【 授权许可】

Unknown