IEEE Journal of the Electron Devices Society | |
Extensive Electrical Characterization Methodology of Advanced MOSFETs Towards Analog and RF Applications | |
Arka Halder1  Sergej Makovejev1  Denis Flandre1  Jean-Pierre Raskin2  Valeriya Kilchytska2  Babak Kazemi Esfeh3  Lucas Nyssens4  | |
[1] catholique de Louvain, Louvain-la-Neuve, Belgium;ICTEAM, Universit&x00E9;Incize, Louvan-la-Neuve, Belgium;Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universit&x00E9; | |
关键词: Analog and RF figures of merit; FDSOI; FinFET; MOSFET; self-heating; S-parameters; | |
DOI : 10.1109/JEDS.2021.3057798 | |
来源: DOAJ |
【 摘 要 】
This
【 授权许可】
Unknown