Photonic Crystal Cavity With Double Heterostructure in GaN Bulk

IEEE Photonics Journal

Yu-Chieh Cheng¹  Chia-Hua Chan²  Chien-Chieh Lee³  Dong-Po Cai⁴  Ya-Lun Tsai⁴  Chii-Chang Chen⁴ 

[1] $^{1}$ Department of Optics and Photonics, National Central University, Jhongli, Taiwan;$^{2}$ Graduate Institute of Energy Engineering, National Central University, Jhongli, Taiwan;$^{3}$ Optical Sciences Center, National Central University, Jhongli, Taiwan;Department of Optics and Photonics, National Central University, Jhongli, Taiwan;

关键词: Photonic Crystals;    GaN;    double heterostructure;    Q-factor;   

DOI  :  10.1109/JPHOT.2013.2280343

来源: DOAJ

【 摘 要 】

In this study, the photonic crystal cavity has been designed, fabricated, and characterized in GaN bulk materials with the double heterostructure, which can provide high Q-factor. The cavity is characterized by optical pumping. The resonant mode is observed at the wavelength of 362 nm. The threshold of excitation power is found to be 0.9 mW, corresponding to the power density of 12.7 kW/ cm² . The Q-factor of the cavity is measured to be as high as 10⁴.

【 授权许可】

Unknown