Combined Focused Electron Beam-Induced Deposition and Etching for the Patterning of Dense Lines without Interconnecting Material

Micromachines

卷:12

Sangeetha Hari¹  Pieter Kruit¹  C.W. Hagen¹  J.J. L. Mulders²  P.H. F. Trompenaars² 

[1] Department of Imaging Physics, Faculty of Applied Sciences, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands;

[2] Thermo Fisher Scientific, Achtseweg Noord 5, 5651 GG Eindhoven, The Netherlands;

关键词: lithography;    focused electron beam-induced deposition;    focused electron beam-induced etching;    interconnects;    scanning electron microscopy;    nanopatterning;   

DOI  :  10.3390/mi12010008

来源: DOAJ

【 摘 要 】

High resolution dense lines patterned by focused electron beam-induced deposition (FEBID) have been demonstrated to be promising for lithography. One of the challenges is the presence of interconnecting material, which is often carbonaceous, between the lines as a result of the Gaussian line profile. We demonstrate the use of focused electron beam-induced etching (FEBIE) as a scanning electron microscope (SEM)-based direct-write technique for the removal of this interconnecting material, which can be implemented without removing the sample from the SEM for post processing. Secondary electron (SE) imaging has been used to monitor the FEBIE process, and atomic force microscopy (AFM) measurements confirm the fabrication of well separated FEBID lines. We further demonstrate the application of this technique for removing interconnecting material in high resolution dense lines using backscattered electron (BSE) imaging to monitor the process.

【 授权许可】

Unknown