Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs

IEEE Journal of the Electron Devices Society

卷:6

Gokhan Atmaca¹  Sorin Cristoloveanu²  Ki-Sik Im³  Raphael Caulmilone⁴  Chul-Ho Won⁵  Jung-Hee Lee⁵  Yong-Tae Kim⁶ 

[1] Department of Physics, Gazi University, Ankara, Turkey;

[2] Institute of Microelectronics, Electromagnetism, and Photonics, Grenoble Institute of Technology, Grenoble, France;

[3] Institute of Semiconductor Fusion Technology, Kyungpook National University, Daegu, South Korea;

[4] SOITEC, Bernin, France;

[5] School of Electronics Engineering, Kyungpook National University, Daegu, South Korea;

[6] Semiconductor Materials and Device Laboratory, Korea Institute of Science and Technology, Seoul, South Korea;

关键词: GaN;    MOSFET;    nanowire;    gate-all-around;    GaN-on-insulator;    dynamic mode;   

DOI  :  10.1109/JEDS.2018.2806930

来源: DOAJ

【 摘 要 】

Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that the electrons in the isolated nanowire channel do not suffer from trapping effects. However, the dc current level measured at high drain and gate voltage is reduced to approximately one half of the value measured in dynamic mode. This is attributed to the difficulty in heat dissipation because the suspended lateral nanowire channel is thermally isolated from the substrate. However, the heat dissipation is mitigated as the nanowire size increases.

【 授权许可】

Unknown