Final Technical Report

drucker, jeff

关键词: nanowire;    epitaxy;   

DOI  :  10.2172/1149731
RP-ID  :  DOE-ASU-ER46345-F
PID  :  OSTI ID: 1149731

美国|英语

来源: SciTech Connect

【 摘 要 】

This project investigated the fundamental science of nanowire epitaxy using vapor-liquid-solid growth in the silicon-germanium material system. Ultrahigh vacuum chemical vapor deposition (UHV CVD) was the primary deposition method. Nanowires grown using UHV CVD were characterized ex situ using scanning electron microscopy and a variety of transmission electron microscopy techniques. In situ transmission electron microscopy was also employed to monitor growth in real time and was instrumental in elucidating growth mechanisms.