Selective area epitaxy of III-V nanowires: toward nanowire-on-silicon tandem solar cells

nanowire;epitaxy;metalorganic chemical vapor deposition (MOCVD);compound semiconductors

Bassett, Kevin Paul

关键词: nanowire;    epitaxy;    metalorganic chemical vapor deposition (MOCVD);    compound semiconductors;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/78768/BASSETT-DISSERTATION-2015.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Nanowires grown via the selective area epitaxy technique (SAE-NWs) are of great research interest for use in next-generation electronic and electro-optic devices.As compared to other nanowire growth techniques commonly studied, SAE-NW is a highly controllable process due to the use of a lithographically defined growth mask, and the lack of need for a catalytic seed particle results in impurity-free material with nearly atomically flat sidewalls formed on low index crystal facets.In this thesis, the SAE-NW growth technique is examined and progress in the field is reviewed.A study of the geometric evolution of SAE-NWs during growth is presented, followed by results of efforts to work towards fabrication of a tunnel diode for use in a nanowire-on-silicon solar cell.Finally, future directions for the continued study of SAE-NWs are outlined.