Growth and characterization of Hg1â€�?�ð�?�¥Cd𝑥Te epitaxial films by isothermal vapour phase epitaxy (ISOVPE)

Bulletin of materials science

Sudeep Verma¹  Upendra Kumar¹  Vinod Kapoor¹  Anshu Goyal¹  J K Radhakrishnan¹  S Sitharaman¹  Garima Gupta¹  Madhukar Gautam¹  Anand Kumar¹  Manju Malhotra¹ 

[1] Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, India$$Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, IndiaSolid State Physics Laboratory, Lucknow Road, Delhi 110 054, India$$

关键词: MCT;    epitaxy;    characterization;    vapour phase.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Growth of Hg_{1�?����?}Cd_�?Te epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized by using the Hall effect and capacitance�?�voltage (𝐶�?����??) measurements.

【 授权许可】

Unknown