Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs

IEEE Journal of the Electron Devices Society

Erik Lind¹  Lars-Erik Wernersson¹  Johannes Svensson¹  Olli-Pekka Kilpi¹ 

[1] Department of Electrical and Information Technology, Lund University, Lund, Sweden;

关键词: Vertical;    nanowire;    InAs;    InGaAs;    MOSFET;    heterostructure;   

DOI  :  10.1109/JEDS.2018.2878659

来源: DOAJ

【 摘 要 】

Vertical InAs/InGaAs nanowire MOSFETs are fabricated in a gate-last fabrication process, which allows gate-lengths down to 25 nm and accurate gate-alignment. These devices demonstrate high performance with transconductance of 2.4 mS/μm, high on-current, and off-current below 1 nA/μm. An in-depth analysis of the heterostructure MOSFETs are obtained by systematically varying the gate-length and gate location. Further analysis is done by using virtual source modeling. The injection velocities and transistor metrics are correlated with a quasi-ballistic 1-D MOSFET model. Based on our analysis, the observed performance improvements are related to the optimized gate-length, high injection velocity due to asymmetric scattering, and low access resistance.

【 授权许可】

Unknown