IEEE Journal of the Electron Devices Society | 卷:6 |
Pretreatment Effects on High-k/InxGa1–xAs MOS Interface Properties and Their Physical Model | |
Mitsuru Takenaka1  Shinichi Takagi1  Chi-Yu Chang2  Chiaki Yokoyama2  | |
[1] Department of Electrical Engineering and Information Systems, School of Engineering, University of Tokyo, Tokyo, Japan; | |
[2] Department of Electrical and Electronic Engineering, University of Tokyo, Tokyo, Japan; | |
关键词:
BHF;
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DOI : 10.1109/JEDS.2017.2760344 | |
来源: DOAJ |
【 摘 要 】
The electrical and physical properties of atomic layer deposition high-k (Al2O3 and HfO2) /InxGa1-xAs (x = 0.53, 0.7, and 1) MOS interfaces with (NH4)Sy, BHF, and HF pretreatment are examined. It is found that, as the In content (x) becomes higher, InxGa1-xAs MOS interfaces with BHF and HF cleaning show better C-V characteristics and lower interface state density (Dit) than with (NH4)Sy pretreatment. Also, the amounts of arsenic oxides, evaluated by X-ray photoelectron spectroscopy, at the high In content Al2O3/InxGa1-xAs MOS interfaces are found to increase with BHF and HF cleaning than with (NH4)Sy cleaning. These results suggest that arsenic oxides can contribute to passivation of high-k/InxGa1-xAs MOS interface defects and the decrease in Dit for x = 0.7 and 1. Finally, we propose a physical model to explain the relationship between possible interface defects responsible for Dit and the pretreatment effects with the different In contents.
【 授权许可】
Unknown