Pretreatment Effects on High-k/InxGa1–xAs MOS Interface Properties and Their Physical Model

IEEE Journal of the Electron Devices Society

卷:6

Mitsuru Takenaka¹  Shinichi Takagi¹  Chi-Yu Chang²  Chiaki Yokoyama² 

[1] Department of Electrical Engineering and Information Systems, School of Engineering, University of Tokyo, Tokyo, Japan;

[2] Department of Electrical and Electronic Engineering, University of Tokyo, Tokyo, Japan;

关键词: BHF;    C-V;    Dit;    HF;    InAs;    InGaAs;   

DOI  :  10.1109/JEDS.2017.2760344

来源: DOAJ

【 摘 要 】

The electrical and physical properties of atomic layer deposition high-k (Al₂O₃ and HfO₂) /In_xGa_1-xAs (x = 0.53, 0.7, and 1) MOS interfaces with (NH₄)S_y, BHF, and HF pretreatment are examined. It is found that, as the In content (x) becomes higher, In_xGa_1-xAs MOS interfaces with BHF and HF cleaning show better C-V characteristics and lower interface state density (D_it) than with (NH₄)S_y pretreatment. Also, the amounts of arsenic oxides, evaluated by X-ray photoelectron spectroscopy, at the high In content Al₂O₃/In_xGa_1-xAs MOS interfaces are found to increase with BHF and HF cleaning than with (NH₄)S_y cleaning. These results suggest that arsenic oxides can contribute to passivation of high-k/In_xGa_1-xAs MOS interface defects and the decrease in D_it for x = 0.7 and 1. Finally, we propose a physical model to explain the relationship between possible interface defects responsible for D_it and the pretreatment effects with the different In contents.

【 授权许可】

Unknown