Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

Beilstein Journal of Nanotechnology

卷:9

Maria Tchernycheva¹  Igor V. Shtrom²  Georgiy A. Sapunov³  Ivan S. Mukhin³  Alexey M. Mozharov³  George E. Cirlin³  Alexey D. Bolshakov³  Vladimir V. Fedorov³  Nickolay V. Sibirev⁴  Evgeniy V. Ubyivovk⁴ 

[1] Institut d’Electronique Fondamentale, UMR 8622 CNRS, University Paris Sud, University Paris-Saclay, 91405 Orsay cedex, France;

[2] Ioffe Institute, Politekhnicheskaya 29, 194021 St. Petersburg, Russia;

[3] St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia;

[4] St. Petersburg State University, 7/9 Universitetskaya emb., 199034 St. Petersburg, Russia;

关键词: A3B5 on Si;    epitaxy;    GaN;    MBE;    nanowires;    nanotubes;    nanotube-like nanostructures;    Si;   

DOI  :  10.3762/bjnano.9.17

来源: DOAJ

【 摘 要 】

In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy. In the first part of our study we investigate the influence of the growth parameters on the geometrical properties of the GaN NW arrays. First, we find that the annealing procedure carried out prior to deposition of the AlN buffer affects the elongation rate and the surface density of the wires. It has been experimentally demonstrated that the NW elongation rate and the surface density drastically depend on the substrate growth temperature, where 800 °C corresponds to the maximum elongation rate of the NWs. In the second part of the study, we introduce a new dopant-stimulated method for GaN nanotube-like nanostructure synthesis using a high-intensity Si flux. Transmission electron microscopy was used to investigate the morphological features of the GaN nanostructures. The synthesized structures have a hexagonal cross-section and possess high crystal quality. We propose a theoretical model of the novel nanostructure formation which includes the role of the dopant Si. Some of the Si-doped samples were studied with the photoluminescence (PL) technique. The analysis of the PL spectra shows that the highest value of donor concentration in the nanostructures exceeds 5∙1019 cm−3.

【 授权许可】

Unknown