Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates

Energies

Justinas Palisaitis¹  Muhammad Junaid¹  Lina Tengdelius¹  Lars Hultman¹  Per Ola Åke Persson¹  Jens Birch¹  Hans Högberg¹  Elena Alexandra Serban¹  Ching-Lien Hsiao¹ 

[1] Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-58183, Sweden;

关键词: GaN;    nanorods;    Si, SiC, Ti, Mo, TiN and ZrB2 templates;    magnetron sputtering;    epitaxy;   

DOI  :  10.3390/en10091322

来源: DOAJ

【 摘 要 】

We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically Si, SiC, TiN/Si, ZrB2/Si, ZrB2/SiC, Mo, and Ti. Growth temperature was optimized on Si, TiN/Si, and ZrB2/Si, resulting in increased nanorod aspect ratio with temperature. All nanorods exhibit high purity and quality, proved by the strong bandedge emission recorded with cathodoluminescence spectroscopy at room temperature as well as transmission electron microscopy. These substrates/templates are affordable compared to many conventional substrates, and the direct deposition onto them eliminates cumbersome post-processing steps in device fabrication. Thus, magnetron sputter epitaxy offers an attractive alternative for simple and affordable fabrication in optoelectronic device technology.

【 授权许可】

Unknown