Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics

Nanoscale Research Letters

Peng Dong¹  Lianghui Li¹  Juntao Li¹  Zhiqiang Li¹  Lin Zhang¹  Xingliang Xu¹  Jian Zhang² 

[1] Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu, China;Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang, China;School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China;

关键词: Silicon carbide;    PiN diode;    High voltage;    Ultraviolet irradiation;   

DOI  :  10.1186/s11671-021-03601-3

来源: Springer

【 摘 要 】

In this paper, the effect of ultraviolet (UV) irradiation on the static characteristics of high voltage 4H-SiC PiN is investigated. No significant change is observed in the forward on state characteristic of 4H-SiC PiN diodes before and after ultraviolet light irradiation. However, it is found that the blocking voltage is significantly increased with UV irradiation, which is resulted from the depletion region width extension with the collection of positive charges under the increase of the surface negative charge density. The deep level transient spectroscopy reveals that the UV irradiation induced deep-level defects play a dominant role over the trapped negative charges, and therefore leads to the increase of blocking voltage of 4H-SiC PiN Diodes.

【 授权许可】

CC BY