Planar betavoltaic converter creation with plasma-immersion ion implantation process*

19th International Scientific Conference Reshetnev Readings 2015

Rudenko, K.V.^1 ; Miakonkih, A.V.^1 ; Rogojin, A.E.^1 ; Bogdanov, S.V.^2 ; Sidorov, V.G.^2 ; Zelenkov, P.V.^2

Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia^1

Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russia^2

关键词: Betavoltaic element;    PiN diode;    Planar diode;    Plasma immersion ion implantation;    Reverse voltages;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/122/1/012029/pdf
DOI  :  10.1088/1757-899X/122/1/012029

来源: IOP

【 摘 要 】

Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ∼ 1 uA/cm2at reverse voltage -1 V.