Shot-noise suppression effects in InGaAs planar diodes at room temperature

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

García-Pérez, Ó.^1 ; Sánchez-Martín, H.^2 ; Mateos, J.^1 ; Pérez, S.^1 ; Westlund, A.^2 ; Grahn, J.^2 ; González, T.^1

Department of Applied Physics, Universidad de Salamanca, Salamanca

37008, Spain^1

Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, SE-412 96, Sweden^2

关键词: Noise characteristic;    Noise properties;    Planar diode;    Poissonian;    Potential profiles;    Resistive contacts;    Shot noise suppression;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012061/pdf
DOI  :  10.1088/1742-6596/647/1/012061

来源: IOP

【 摘 要 】

In this work, the noise characteristics of InGaAs planar diodes are studied. The presence of a recessed region originates a barrier in the potential profile, which can modulate the passage of ballistic carriers along the structure. This effect, in turn, may lead to suppressed levels of noise with respect to the full Poissonian value due to Coulomb interaction. With the aim of evidencing such phenomenon, the noise properties of a set of devices with different dimensions have been measured at room temperature. Some evidence of potential shot-noise suppression is observed in the results, but the undesired effect of resistive contacts and accesses has been found to be a limiting factor to quantify the suppression accurately.