Analytical model of plasma-chemical etching in planar reactor

19th Conference on Plasma Surface Interactions

Veselov, D.S.^1,2 ; Bakun, A.D.^1 ; Voronov, Yu A^1 ; Kireev, V Yu^2 ; Vasileva, O.V.^1

National Research, Nuclear University, MEPhI (Moscow Engineering Physics Institute), 31 Kashirskoe highway, Moscow

115409, Russia^1

National Research University of Electronic Technology, 1 Shokin Square, Zelenograd

124498, Russia^2

关键词: Analytical expressions;    Chemical etching;    Etch selectivity;    Ion currents;    Loading effects;    Planar diode;    Processed materials;    Wafer temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/748/1/012015/pdf
DOI  :  10.1088/1742-6596/748/1/012015

来源: IOP

【 摘 要 】

The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy. At the same time, etch selectivity of processed material decreases as compared with the mask. Etch rate decreases with the distance from the centre axis of the reactor. To decrease the loading effect, it is necessary to reduce the wafer temperature and pressure in the reactor, as well as increase the gas flow rate through the reactor.