Effects of texturization due to chemical etching and laser on the optical properties of multicrystalline silicon for applications in solar cells

3rd International Meeting for Researchers in Materials and Plasma Technology; 1st Symposium on Nanoscience and Nanotechnology

物理学;材料科学

Vera, D.^1 ; Mass, J.^2 ; Manotas, M.^2 ; Cabanzo, R.^3 ; Mejia, E.^3

Universidad de la Costa (CUC), Barranquilla, Colombia^1

Universidad Del Atlántico, Barranquilla, Colombia^2

Universidad Industrial de Santander, Bucaramanga, Colombia^3

关键词: Chemical etching;    Diffuse spectroscopy;    Laser treatment;    Multi-crystalline silicon;    Parallel line;    Reflectance values;    Reflection of light;    Scanning electron micrographs;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/687/1/012008/pdf
DOI  :  10.1088/1742-6596/687/1/012008

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this work we carried out the texturization of surfaces of multicrystalline silicon type-p in order to decrease the reflection of light on the surface, using the chemical etching method and then a treatment with laser. In the first method, it was immersed in solutions of HF:HNO3:H2O, HF:HNO3:CH3COOH, HF:HNO3:H3PO4, in the proportion 14:01:05, during 30 seconds, 1, 2 and 3 minutes. Subsequently with a laser (ND:YAG) grids were generated beginning with parallel lines separated 50μm. The samples were analyzed by means of diffuse spectroscopy (UV-VIS) and scanning electron micrograph (SEM) before and after the laser treatment. The lowest result of reflectance obtained by HF:HNO3:H2O during 30 seconds, was of 15.5%. However, after applying the treatment with laser the reflectance increased to 17.27%. On the other hand, the samples treated (30 seconds) with acetic acid and phosphoric acid as diluents gives as a result a decrease in the reflectance values after applying the laser treatment from 21.97% to 17.79% and from 27.73% to 20.03% respectively. The above indicates that in some cases it is possible to decrease the reflectance using jointly the method of chemical etching and then a laser treatment.