Porous silicon Bragg reflectors on multi-crystalline silicon wafer with p-n junction

International Conference on Microtechnology and Thermal Problems in Electronics 2015; International Conference on Smart Engineering of New Materials 2015

Ivanov, I.I.^1 ; Skryshevsky, V.A.^1 ; Kyslovets, O.S.^1 ; Nychyporuk, T.^2 ; Lemiti, M.^2

Institute of High Technologies, Taras Shevchenko National University of Kyiv, 64 Volodymyrska street, Kyiv

01601, Ukraine^1

Institut des Nanotechnologies de Lyon, UMR CNRS 5270, Université de Lyon, INSA Lyon, Bct. Blaise Pascal, 7 Avenue Jean Capelle, Villeurbanne Cedex

69621, France^2

关键词: Dielectric layer;    Multi-crystalline silicon;    Multicrystalline;    Multicrystalline silicon wafers;    P-n junction solar cells;    Silicon Bragg reflector;    Single crystalline silicon;    Single-crystalline;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/709/1/012006/pdf
DOI  :  10.1088/1742-6596/709/1/012006

来源: IOP

【 摘 要 】

Bragg reflectors consisting of the sequence of dielectric layers are considered to create p-n junction solar cells (SC) with improved efficiency in the longwave spectral range. Bragg mirrors (BM) based on porous silicon (PS) mutilayers at the backside of single crystalline and multicrystalline silicon wafer were formed by electrochemically etching. Maximal experimental reflectivity for BM on multicrystalline substrate achieves 62% due to the natural crystallites disorientation of multicrystalline substrate, whereas for single crystalline silicon the reflectivity in maximum is 87%. BM was formed also on rear side of multicrystalline silicon wafer with p-n junction.