Ultra-low leakage SRAM design with sub-32 nm tunnel FETs for low standby power applications

Micro & nano letters

article

Adam Makosiej¹  Navneet Gupta²  Naga Vakul²  Andrei Vladimirescu²  Sorin Cotofana³  Santanu Mahapatra⁴  Amara Amara²  Costin Anghel² 

[1] Commissariat a l'Energie Atomique CEA-LETI;Institut superieur d'electronique de Paris;Computer Engineering Laboratory Faculty of Electrical Engineering, Mathematics and Computer Science, Delft University of Technology;Indian Institute of Science

关键词: SRAM chips;    tunnel transistors;    field effect transistors;    nanoelectronics;    tunnelling;    semiconductor device models;    technology CAD (electronics);    leakage currents;    ultralow leakage SRAM design;    low-standby power applications;    tunnel-field-effect transistors;    quantum band-to-band tunnelling;    subthreshold slope;    MOSFET;    standby current;    TFET SRAM cell;    p-TFET model;    n-TFET model;    TCAD;    read SNM;    write SNM;    memory array;    magnetic flux density 8 T;    voltage 1 V;    voltage 120 mV;    voltage 200 mV;    frequency 3.84 GHz;    frequency 806 MHz;   

DOI  :  10.1049/mnl.2016.0442

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Large ovarian tumors are not very uncommon in rural India and developing countries, due to delayed reporting by the patients to the scarce healthcare facilities available, hence anesthesiologists must be aware of the anesthetic challenges that one may have to face in these cases. We report perioperative anesthetic management for a large ovarian tumor which was successfully removed.The tumor weighed 32 kg with a fluid volume of 15 lit.

【 授权许可】

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