Effect of thickness on the structural and optical properties of the niobium-doped β -Ga 2 O 3 films

Micro & nano letters

article

Hao Zhang¹  Jinxiang Deng¹  Le Kong¹  Zhiwei Pan¹  Zhiying Bai¹  Jiyou Wang¹ 

[1] College of Applied Sciences, Beijing University of Technology

关键词: sputter deposition;    gallium compounds;    doping;    thin films;    niobium;    photoluminescence;    energy gap;    surface morphology;    niobium-doped beta gallium oxide;    radio-frequency magnetron method;    film thickness;    niobium-doped β-Ga2O3 thin films;    crystalline quality;    ultraviolet absorption edge;    photoluminescence spectrum;    bandgap;    Ga2O3Nb;   

DOI  :  10.1049/mnl.2018.5782

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

To investigate the effect of thickness on the structural and optical properties of niobium-doped beta gallium oxide ( β -Ga 2 O 3 :Nb) thin films, a series of β -Ga 2 O 3 :Nb thin films with different thicknesses were prepared by radio-frequency magnetron method. The crystalline quality is highly improved when the film thickness exceeds 145 nm. The surface exhibits different morphologies under different film thicknesses. The average transmittance of all the films are over 80% in visible range, and that the ultraviolet absorption edge shifts to longer wavelength indicates the bandgap shrinks with increasing the film thickness. Moreover, the photoluminescence spectrum measurements indicate that fewer defects were formed when the film thickness is around 145 nm.

【 授权许可】

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