科技报告详细信息
Spectroscopy of Charge Carriers and Traps in Field-Doped Organic Semiconductors
Zhu, Xiaoyang ; Frisbie, C Daniel
关键词: organic semiconductors;    doping;    transport;    spectroscopy;   
DOI  :  10.2172/1048138
RP-ID  :  5197013
PID  :  OSTI ID: 1048138
学科分类:材料科学(综合)
美国|英语
来源: SciTech Connect
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【 摘 要 】

This research project aims to achieve quantitative and molecular level understanding of charge carriers and traps in field-doped organic semiconductors via in situ optical absorption spectroscopy, in conjunction with time-resolved electrical measurements. During the funding period, we have made major progress in three general areas: (1) probed charge injection at the interface between a polymeric semiconductor and a polymer electrolyte dielectric and developed a thermodynamic model to quantitatively describe the transition from electrostatic to electrochemical doping; (2) developed vibrational Stark effect to probe electric field at buried organic semiconductor interfaces; (3) used displacement current measurement (DCM) to study charge transport at organic/dielectric interfaces and charge injection at metal/organic interfaces.

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