Study on dynamic scaling of morphological evolution of TiO 2 film deposited with different O 2 /Ar flow ratio

Micro & nano letters

article

Yanfei He¹  Yi Zhang¹  Xin Zhang¹  Yuanbing Liu¹  Xiaotian Yang¹  Guozeng Li¹  Hualin Wang¹  Weiwei Jiang¹  Chaoqian Liu¹  Nan Wang¹  Shimin Liu¹  Yunxian Cui¹  Wanyu Ding¹ 

[1] College of Materials Science and Engineering, Dalian Jiaotong University

关键词: island structure;    sputter deposition;    surface roughness;    semiconductor thin films;    surface morphology;    semiconductor materials;    semiconductor growth;    TiO2;    crystallographic orientation effect;    island structure density;    diffuse effect;    roughness exponent;    plasma properties;    direct current pulsed magnetron sputtering technique;    morphological evolution;    dynamic scaling;    TiO2 film surface;    O2-Ar flow ratio;    growth behaviour;   

DOI  :  10.1049/mnl.2018.5742

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

With increasing O 2 /Ar flow ratio from 2/18 to 20/0, TiO 2 films were deposited by the direct current pulsed magnetron sputtering technique. The influence of O 2 /Ar flow ratio on plasma properties was discussed, which controlled the growth behaviour of TiO 2 film. The growth behaviour influenced the value of roughness exponent α of TiO 2 film, which reflected the dynamic scaling of the morphological evolution of TiO 2 film. Finally, the relation between the dynamic scaling of the morphological evolution of TiO 2 film and O 2 /Ar flow ratio was discussed systematically. The results indicate that with the other parameters constant, the growth behaviour of TiO 2 film is dominated by O 2 /Ar flow ratio. By increasing O 2 /Ar flow ratio from 2/18 up to 6/14, the growth behaviour of TiO 2 film transforms from the shadowing effect controlling to diffuse effect controlling, which results in the density of island structure on TiO 2 film surface decreases, the size of island structure on TiO 2 film surface increases, and the roughness exponent α of film decreases. When O 2 /Ar flow ratio exceeds 6/14, the density of island structure on TiO 2 film surface remains constant. In this situation, the crystallographic orientation effect controls the growth behaviour of TiO 2 film, which increases roughness exponent α .

【 授权许可】

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