Preparation of irregular silica nano-abrasives for the chemical mechanical polishing behaviour on sapphire substrates

Micro & nano letters

article

Yue Dong¹  Hong Lei²  Wenqing Liu³ 

[1] School of Materials Science and Engineering, Shanghai University;Research Center of Nano Science and Technology, Shanghai University;Institute of Materials, School of Materials Science and Engineering, Shanghai University

关键词: abrasion;    chemical mechanical polishing;    silicon compounds;    X-ray photoelectron spectra;    abrasives;    surface roughness;    sapphire;    electrokinetic effects;    nickel;    nanostructured materials;    nanofabrication;    chemical reactions;    irregular silica nanoabrasives;    sapphire CMP process;    chemical mechanical polishing behaviour;    sapphire chemical mechanical polishing;    high polishing rate;    smooth surface quality;    flat surface quality;    nickel ion-induced effect;    growth method;    X-ray photoelectron spectroscopy;    solid phase chemical reactions;    contact model;    zeta potential;    SiO2-Al2O3;   

DOI  :  10.1049/mnl.2019.0277

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Abrasives directly affect the polishing rate and surface quality for sapphire chemical mechanical polishing (CMP). In this work, irregular silica nano-abrasives were synthesised by nickel ion-induced effect combined with growth method in order to simultaneously acquire a high polishing rate and a smooth and flat surface quality on sapphire. The synthesis process of irregular silica nano-abrasives is predicted and analysed by zeta potential. The irregular silica nano-abrasives have a distinguished CMP behaviour for a 22.72% increase in polishing rate and a flat surface quality of sapphire. X-ray photoelectron spectroscopy analysis results have confirmed these solid-phase chemical reactions happen during the sapphire CMP process. In addition, it was analysed about the polishing process and mechanism by establishing a contact model between nano-abrasives and sapphire.

【 授权许可】

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