Physical insight and performance metrics of monolayer MX 2 heterojunction TFETs

Micro & nano letters

article

Khairul Alam¹ 

[1] Department of Electrical and Electronic Engineering, East West University

关键词: conduction bands;    valence bands;    MOSFET;    tunnel transistors;    tunnelling;    monolayers;    energy gap;    semiconductor doping;    semiconductor heterojunctions;    tungsten compounds;    molybdenum compounds;    high electron mobility transistors;    performance metrics;    doped source material;    homojunction TFET;    channel material;    source valence band;    channel conduction band;    band tunnelling;    metal oxide semiconductor field-effect transistors;    complex E–k curve;    energy gap;    quantum simulation;    monolayer MX2 heterojunction TFET;    vector plots;    high drive current;    monolayer MX2heterojunction n-channel tunnelling field-effect transistors;    relative small junction field;    shortest tunnel path;    heterojunction tunnel transistor;    switching delay;    cut-off frequency;    low standby power device requirements;    reference independent figure of merit;    small band bending;    band to band tunnelling;    voltage 0.3 V;    voltage 15.6 mV;    time 0.401 ps;    frequency 2.1 THz;    WTe2-MoS2;   

DOI  :  10.1049/mnl.2019.0588

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

The physics and performance of monolayer MX 2 heterojunction n TFETs are studied using a quantum simulation. The imaginary wave vector reveals that WTe 2 is the most promising source material. Results of heterojunction TFETs with WTe 2 source material and of WTe 2 homojunction TFET reveal that WTe 2 –MoS 2 heterojunction TFET is the most promising candidate with a 620 μA/μm drive current for a 0.3 volt gate swing. The energy gap between the valence band of source material and the conduction band of channel material, , is the key parameter for high drive current. The WTe 2 –MoS 2 heterojunction has the smallest value that results in small band bending near the heterojunction, which creates the shortest tunnel path and therefore yields the highest drive current. The WTe 2 –MoS 2 TFET has an average turn-on slope of 15.6 mV/dec, an on/off current ratio of , a drive current of 620 μA/μm, a transconductance of 10.98 mS/μm, a total capacitance of 0.829 fF/μm, a switching delay of 0.401 ps, and a cutoff frequency of 2.1 THz. The performance metrics closely comply with the ITRS 2026 LOP and LSTP device requirements. Its value of 11.97 μA/μm is large enough to compete with MOSFETs.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND