Large-scale data principal component analysis of phase transition from a-Si:H to nc-Si:H using PECVD optical emission spectra

Micro & nano letters

article

Li-Han Kau¹  Hung-Jui Huang¹  Hsueh-Er Chang¹  Yu-Lin Hsieh¹  Yiin-Kuen Fuh¹  Tomi T. Li¹ 

[1] Department of Mechanical Engineering, National Central University;Opto-mechatronics Engineering, National Central University

关键词: plasma chemistry;    semiconductor thin films;    plasma CVD;    principal component analysis;    semiconductor growth;    nanostructured materials;    crystallisation;    silicon;    hydrogen;    elemental semiconductors;    solid-state phase transformations;    nanofabrication;    SiH;    power density;    mass flow rate;    large-scale data principal component analysis;    nc-SiH film;    crystallisation rate index;    OES spectra characterisation;    nc-SiH emission characteristics;    hydrogen dilution ratio;    PECVD process health condition;    PC2-OES algorithm;    plasma-enhanced chemical vapour deposition;    in-situ diagnostics optical emission spectroscopy;    plasma chemistry monitoring;    solar cell industry;    hydrogenated nanocrystalline silicon films;    phase transformation;    PECVD optical emission spectra;    phase transition;   

DOI  :  10.1049/mnl.2019.0714

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Phase transformation of hydrogenated nanocrystalline silicon (nc-Si:H) films was essential in the solar cells industry. Therefore, the plasma chemistry monitoring of in-situ diagnostics optical emission spectroscopy (OES) of plasma-enhanced chemical vapour deposition (PECVD) is deemed crucial for investigating the phase transformation. The proposed PC2-OES algorithm can be used to monitor the PECVD process health condition of the crystallisation rate at different hydrogen dilution ratios. Principal component analysis (PCA) was performed to distinguish the crucial role of nc-Si:H emission characteristics of plasma chemistry and the resultant crystallisation rate. Measurement results revealed that OES spectra characterisation confirmed that the crystallisation rate index (Hα*/SiH*) was highly correlated to hydrogen dilution ratio ( R ) and phase transformation of nc-Si:H film. The proposed PCA-based evaluation method will provide valuable information to reflect consistently the crystallisation rate of deposited films with different hydrogen dilution ratio and possibly other processing parameters of mass flow rate and applied power density.

【 授权许可】

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