Study of indium nitride and indium oxynitride band gaps

Materials Research

M. Sparvoli²  R. D. Mansano²  J. F. D. Chubaci¹ 

[1] ,Universidade de São Paulo - USP Escola Politécnica Departamento de Engenharia de Sistemas EletrônicosSão Paulo SP ,Brasil

关键词: indium oxynitride;    sputtering;    band gap;    semiconductor;   

DOI  :  10.1590/S1516-14392013005000063

来源: SciELO

【 摘 要 】

This work shows the study of the optical band gap of indium oxynitride (InNO) and indium nitride (InN) deposited by magnetron reactive sputtering. InNO shows multi-functionality in electrical and photonic applications, transparency in visible range, wide band gap, high resistivity and low leakage current. The deposition processes were performed in a magnetron sputtering system using a four-inches pure In (99.999%) target and nitrogen and oxygen as plasma gases. The pressure was kept constant at 1.33 Pa and the RF power (13.56 MHz) constant at 250 W. Three-inches diameter silicon wafer with 370 micrometer thickness and resistivity in the range of 10 ohm-centimeter was used as substrate. The thin films were analyzed by UV-Vis-NIR reflectance, photoluminescence (PL) and Hall Effect. The band gap was obtained from Tauc analysis of the reflectance spectra and photoluminescence. The band gap was evaluated for both films: for InNO the value was 2.48 eV and for InN, 1.52 eV. The relative quantities obtained from RBS spectra analysis in InNO sample are 48% O, 12% N, 40% In and in InN sample are 8% O, 65% N, 27% In.

【 授权许可】

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