Optical band gap of Sn0.2Bi1.8Te3 thin films

Bulletin of materials science

P H Soni²  C F Desai²  M V Hathi¹ 

[1] Department of Chemistry, R.R. Mehta College of Science, North Gujarat University, Patan 384 265, India$$Department of Chemistry, R.R. Mehta College of Science, North Gujarat University, Patan 384 265, IndiaDepartment of Chemistry, R.R. Mehta College of Science, North Gujarat University, Patan 384 265, India$$;Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara 390 002, India$$Department of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara 390 002, IndiaDepartment of Physics, Faculty of Science, The M.S. University of Baroda, Vadodara 390 002, India$$

关键词: Thin films;    band gap;    optical absorbance;    film thickness;    size effect.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Sn_0.2Bi_1.8Te₃ thin films were grown using the thermal evaporation technique on a (001) face of NaCl crystal as a substrate at room temperature. The optical absorption was measured in the wave number range 500â€�??4000 cm^-1. From the optical absorption data the band gap was evaluated and studied as a function of film thickness and deposition temperature. The data indicate absorption through direct interband transition with a band gap of around 0.216 eV. The detailed results are reported here.

【 授权许可】

Unknown