Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Materials

Wipakorn Jevasuwan³  Yuji Urabe³  Tatsuro Maeda³  Noriyuki Miyata³  Tetsuji Yasuda³  Hisashi Yamada²  Masahiko Hata²  Noriyuki Taoka¹  Mitsuru Takenaka¹ 

[1] Department of Electrical Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan; E-Mails:;Sumitomo Chemical Co., Ltd, Tsukuba, Ibaraki 300-3294, Japan; E-Mails:;National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan; E-Mails:

关键词: InGaAs;    Al₂O₃;    ALD;    MISFET;    trimethylaluminum;   

DOI  :  10.3390/ma5030404

来源: mdpi

【 摘 要 】

Interface-formation processes in atomic layer deposition (ALD) of Al₂O₃ on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al₂O₃ ALD was carried out by repeating a cycle of Al(CH₃)₃ (trimethylaluminum, TMA) adsorption and oxidation by H₂O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al₂O₃ bulk-film growth started from the third cycle. These observations indicated that the Al₂O₃/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS) properties, capacitors and field-effect transistors (FETs) were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland.