Performance Degradations of MISFET-Based Hydrogen Sensors with Pd-Ta2O5-SiO2-Si Structure at Long-Time Operation

Proceedings

Kovalenko, Andrew¹  Nikiforova, Marina²  Podlepetsky, Boris³ 

[1] Author to whom correspondence should be addressed.;Induko Ltd., 32/2 Seslavinskaia str., 121309 Moscow, Russia;Micro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow, Russia

关键词: hydrogen sensors;    MISFET;    Pd-Ta;   

DOI  :  10.3390/proceedings2130777

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

There are presented the generalized results of studies of performance degradation of hydrogen sensors based on MISFET with structure Pd-Ta2O5-SiO2-Si. It was shown how responses’ parameters change during long-term tests of sensors under repeated hydrogen impacts. There were found two stages of time-dependence response’ instability, the degradation degree of which depends on operating conditions, hydrogen concentrations and time. To interpret results there were proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based devices for long-time operation.

【 授权许可】

CC BY