Effect of Temperature and Electrical Modes on Radiation Sensitivity of MISFET Dose Sensors

Proceedings

Pershenkov, Viacheslav¹  Podlepetsky, Boris²  Bakerenkov, Alexander³ 

[1] Author to whom correspondence should be addressed.;Micro- and Nanoelectronics Department, National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), 115409 Moscow, Russia;Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018

关键词: ionizing dose sensors;    MISFET;    temperature;    electrical modes;    radiation sensitivity;   

DOI  :  10.3390/proceedings2130954

学科分类：社会科学、人文和艺术（综合）

来源: mdpi

【 摘 要 】

The temperature and electrical modes influences on radiation sensitivity of n-channel MISFETs sensors of the total ionizing dose were investigated. There were measured the MISFET-based dosimeter output voltages V as function of the radiation doses D at const values of the drain current ID and the drain–source voltage VD, as well as the (ID–VG) characteristics before, during and after irradiations at different temperatures T (VG is the gate voltage). It was shown how the conversion function V(D) and the radiation sensitivity SD are depending on the temperature T for different electrical modes. To interpret experimental data there were proposed the models taking into account the separate contributions of charges in the dielectric Qt and in SiO2–Si interface Qs. The model’s parameters ΔVt(D,T) and ΔVs(D,T) were calculated using the experimental ID–VG characteristics. These models can be used to predict performances of MISFET-based devices.

【 授权许可】

CC BY