Fabrication of SWCNT-Graphene Field-Effect Transistors †

Micromachines

Shuangxi Xie²  Niandong Jiao²  Steve Tung²  Lianqing Liu²  Ting-Hsuan Chen¹ 

[1] State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, China;;State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, 114 Nanta Str., Shenhe Dist., Shenyang 110016, China; E-Mails:

关键词: graphene;    SWCNT;    all-carbon;    FETs;    dielectrophoresis;    AFM;    interdigitated electrodes;   

DOI  :  10.3390/mi6091317

来源: mdpi

【 摘 要 】

Graphene and single-walled carbon nanotube (SWCNT) have been widely studied because of their extraordinary electrical, thermal, mechanical, and optical properties. This paper describes a novel and flexible method to fabricate all-carbon field-effect transistors (FETs). The fabrication process begins with assembling graphene grown by chemical vapor deposition (CVD) on a silicon chip with SiO₂ as the dielectric layer and n-doped Si substrate as the gate. Next, an atomic force microscopy (AFM)-based mechanical cutting method is utilized to cut the graphene into interdigitated electrodes with nanogaps, which serve as the source and drain. Lastly, SWCNTs are assembled on the graphene interdigitated electrodes by dielectrophoresis to form the conductive channel. The electrical properties of the thus-fabricated SWCNT-graphene FETs are investigated and their FET behavior is confirmed. The current method effectively integrates SWCNTs and graphene in nanoelectronic devices, and presents a new method to build all-carbon electronic devices.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.