Radiation Effects in Carbon Nanoelectronics

Electronics

Cory D. Cress³  Julian J. McMorrow⁴  Jeremy T. Robinson³  Brian J. Landi¹  Seth M. Hubbard² 

[1] Chemical & Biomedical Engineering Department, Rochester Institute of Technology, Rochester, NY 14623, USA;Physics Department, Rochester Institute of Technology, Rochester, NY 14623, USA;;Electronics Science & Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA;Global Strategies Group (North America) Inc., Crofton, MD 21114, USA

关键词: single walled carbon nanotubes;    graphene;    total ionizing dose;    TID;    radiation hardening;    FET;    SWCNT;    carbon nanoelectronics;   

DOI  :  10.3390/electronics1010023

来源: mdpi

【 摘 要 】

We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland.