期刊论文详细信息
Electronics | |
Radiation Effects in Carbon Nanoelectronics | |
Cory D. Cress3  Julian J. McMorrow4  Jeremy T. Robinson3  Brian J. Landi1  Seth M. Hubbard2  | |
[1] Chemical & Biomedical Engineering Department, Rochester Institute of Technology, Rochester, NY 14623, USA;Physics Department, Rochester Institute of Technology, Rochester, NY 14623, USA;;Electronics Science & Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375, USA;Global Strategies Group (North America) Inc., Crofton, MD 21114, USA | |
关键词: single walled carbon nanotubes; graphene; total ionizing dose; TID; radiation hardening; FET; SWCNT; carbon nanoelectronics; | |
DOI : 10.3390/electronics1010023 | |
来源: mdpi | |
【 摘 要 】
We experimentally investigate the effects of Co-60 irradiation on the electrical properties of single-walled carbon nanotube and graphene field-effect transistors. We observe significant differences in the radiation response of devices depending on their irradiation environment, and confirm that, under controlled conditions, standard dielectric hardening approaches are applicable to carbon nanoelectronics devices.
【 授权许可】
CC BY
© 2012 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
Files | Size | Format | View |
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RO202003190043335ZK.pdf | 354KB | download |