Qualifying silicon-germanium electronics for harsh radiation environments

SiGe HBT;TID;SEE;Radiation;Superjunction;DD;Profile modifications

Fleetwood, Zachary Evan ; Cressler, John D. Electrical and Computer Engineering Yoder, Paul D. Vogel, Eric M. Schmidt, Britney E. Bakir, Muhannad S. ; Cressler, John D.

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: SiGe HBT;    TID;    SEE;    Radiation;    Superjunction;    DD;    Profile modifications;   

Others  :  https://smartech.gatech.edu/bitstream/1853/59891/1/FLEETWOOD-DISSERTATION-2018.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

The objective of this thesis is to investigate the robustness of Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) to radiation-induced damage. The work described in this document delves into both total ionizing dose (TID) and single-event effect (SEE) mechanisms. Background information is provided for the general operation of SiGe HBTs and basic radiation effects (generic and specifically for SiGe HBTs). Four unique investigations are covered in this work: the first two focus on TID effects for high dose environments and to investigate enhanced-low-dose-rate-sensitivity, and the latter two studies investigate advances in hardening SiGe HBT profiles and methods to conduct SEE experiments using pulsed-lasers in place of highly energetic ionized particles.