A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications

Micromachines

Tanweer Ali¹  Manohara Pai M M²  Sameena Pathan²  Pradeep Kumar³  Ajit Samasgikar⁴  Mrinal Sarvagya⁵  Warsha Balani⁵ 

[1] Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, India;Department of Information and Communication Technology, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, India;Discipline of Electrical, Electronic and Computer Engineering, University of KwaZulu-Natal, Durban 4041, South Africa;MMRFIC Technology Pvt Ltd., Bangalore 560064, India;School of Electronics and Communication Engineering, Reva University, Bangalore 560064, India;

关键词: mm-wave;    LNA;    SiGe HBT;    5G sub-system;   

DOI  :  10.3390/mi12121520

来源: DOAJ

【 摘 要 】

This paper presents the design and implementation of a low-noise amplifier (LNA) for millimeter-wave (mm-Wave) 5G wireless applications. The LNA was based on a common-emitter configuration with cascode amplifier topology using an IHP’s 0.13 $\mathsf{\mu }$m Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) whose f_T/f_MAX/gate-delay is 360/450 GHz/2.0 ps, utilizing transmission lines for simultaneous noise and input matching. A noise figure of 3.02–3.4 dB was obtained for the entire wide bandwidth from 20 to 44 GHz. The designed LNA exhibited a gain (S_21) greater than 20 dB across the 20–44 GHz frequency range and dissipated 9.6 mW power from a 1.2 V supply. The input reflection coefficient (S_11) and output reflection coefficient (S_22) were below −10 dB, and reverse isolation (S_12) was below −55 dB for the 20–44 GHz frequency band. The input 1 dB (P1dB) compression point of −18 dBm at 34.5 GHz was obtained. The proposed LNA occupies only a 0.715 mm² area, with input and output RF (Radio Frequency) bond pads. To the authors’ knowledge, this work evidences the lowest noise figure, lowest power consumption with reasonable highest gain, and highest bandwidth attained so far at this frequency band in any silicon-based technology.

【 授权许可】

Unknown