IEICE Electronics Express | |
A D-band divide-by-6 injection-locked frequency divider with Lange-coupler feedback architecture in 0.13 µm SiGe HBT | |
Oupeng Li1  Lei Wang1  Mingzhou Zan1  Yunchuan Guo1  Qing Chen1  Tiedi Zhang1  Manfei Yang1  | |
[1] School of Electronic Engineering, University of Electronic Science and Technology of China | |
关键词: D-band; SiGe HBT; injection-lock; divider; Lange-coupler; | |
DOI : 10.1587/elex.14.20170328 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
A D-band divide-by-6 injection-locked frequency divider (ILFD) is presented. The basic mechanism of high division ratios frequency divider is investigated. The circuit employs a wideband microstrip Lange coupler, a microstrip delay line and a pair of Cascode transistors to form a feedback loop for enhanced divide-by-6 operation. The proposed ILFD is fabricated with chip size of 0.7 à 0.9 mm2 in a 0.13 µm SiGe HBT technology. The losses of WR-6 waveguide and 170-GHz probe in measurement setup are calibrated accurately by employing the open-short-load approach in a terminated two-port network. Through varying the operating voltage, the free-running oscillation frequency of the circuit can be changed, which results in an effective frequency-division locking range of 135 to 150.2 GHz while consuming 5.25 to 14.4 mW including the output buffer amplifier. A phase noise of â121.58 dBc/Hz at 1 MHz offset is achieved at 150.2 GHz.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
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RO201902195662374ZK.pdf | 4777KB | download |