期刊论文详细信息
IEICE Electronics Express
A D-band divide-by-6 injection-locked frequency divider with Lange-coupler feedback architecture in 0.13 µm SiGe HBT
Oupeng Li1  Lei Wang1  Mingzhou Zan1  Yunchuan Guo1  Qing Chen1  Tiedi Zhang1  Manfei Yang1 
[1] School of Electronic Engineering, University of Electronic Science and Technology of China
关键词: D-band;    SiGe HBT;    injection-lock;    divider;    Lange-coupler;   
DOI  :  10.1587/elex.14.20170328
学科分类:电子、光学、磁材料
来源: Denshi Jouhou Tsuushin Gakkai
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【 摘 要 】

A D-band divide-by-6 injection-locked frequency divider (ILFD) is presented. The basic mechanism of high division ratios frequency divider is investigated. The circuit employs a wideband microstrip Lange coupler, a microstrip delay line and a pair of Cascode transistors to form a feedback loop for enhanced divide-by-6 operation. The proposed ILFD is fabricated with chip size of 0.7 × 0.9 mm2 in a 0.13 µm SiGe HBT technology. The losses of WR-6 waveguide and 170-GHz probe in measurement setup are calibrated accurately by employing the open-short-load approach in a terminated two-port network. Through varying the operating voltage, the free-running oscillation frequency of the circuit can be changed, which results in an effective frequency-division locking range of 135 to 150.2 GHz while consuming 5.25 to 14.4 mW including the output buffer amplifier. A phase noise of −121.58 dBc/Hz at 1 MHz offset is achieved at 150.2 GHz.

【 授权许可】

CC BY   

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