The Influence of the Synthetic Conditions of Chemical Vapor Synthesis on the Size of Gallium Nitride Nanoparticles

JOURNAL OF CHEMICAL ENGINEERING OF JAPAN

Yasushi Azuma²  Manabu Shimada¹  Kikuo Okuyama¹ 

[1] Department of Chemical Engineering, Graduate School of Engineering, Hiroshima University;Hiroshima Joint Research Center for Nanotechnology Particle Project, Japan Chemical Innovation Institute, 203S Interactive Laboratory, ADSM, Hiroshima University

关键词: Gallium Nitride;    Nanoparticle;    Chemical Vapor Deposition;    Quantum Dot;   

DOI  :  10.1252/jcej.38.516

来源: Maruzen Company Ltd

【 摘 要 】

References(12)Cited-By(2)During the synthetic process by chemical vapor synthesis, the influence of temperature and gas flow rate on the size of gallium nitride (GaN) nanoparticles was studied. The mean size of the narrow-dispersed GaN nanoparticles increased as the temperature rose to within a range between 800 and 1100°C. At 700°C, however, GaN nanoparticles were not produced. A faster gas flow resulted in a reduction in the particle size at the ammonia/trimethylgallium ratio of 2400 but not obvious at 1200. These findings can be explained as “coagulation and sintering control regime” and partially as nucleation frequency of GaN nanoparticles.

【 授权许可】

Unknown